O-Band CWDM 112G PAM4 EML Chip
Aiphotonix's HE1CXXS-112P-0008-C (XX = 27, 29, 31, 33, corresponding to ITU-T CWDM channels) is an O-band CWDM 112G PAM4 single-mode EML (Electro-absorption Modulated Laser) chip. It is manufactured by integrating a DFB laser with an electro-absorption modulator and can support data transmission rates of up to 112 Gbps. It is widely used for high-speed optical data signal transmission in AI supercomputing centers and data centers.
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O-Band High Power CW DFB Chip
's HD1XXXS-CW-0100 is a high-power continuous-wave (CW) single-mode O-band DFB (distributed feedback) laser chip, providing more than 70 mW of CW laser output for high-speed silicon photonics modules. With many years of experience in multi-quantum well active layer design and epitaxial growth, as well as in grating fabrication and chip processing, this series of chips ensures excellent performance with high power and low power consumption. It meets the reliability requirements of Telcordia GR-468 and complies with packaging and operational requirements for non-hermetic environments. It is widely used in high-speed data transmission for AI supercomputing centers and data centers.
850 nm 112G PAM4 VCSEL (1x4) Array
HV0850M-112P-0004-4-C: Single-channel rate up to 112 Gb/s, at a wavelength of 850 nm, based on a GaAs VCSEL (1x4) array chip, designed for high-speed optical modules of 400G-SR4 or 800G-SR8 in AI HPC applications.
850 nm 56G PAM4 VCSEL (1x4) Array
HV0850M-56P-0003-4: Single-channel rate up to 56 Gb/s, at a wavelength of 850 nm, based on a GaAs VCSEL (1x4) array chip, designed for high-speed optical modules of 200G-SR4 or 400G-SR8 in AI HPC applications
850 nm 25G VCSEL (1x4) Array
HV0850M-25-0003-4: Single channel rate of 25 Gb/s, with a wavelength of 850 nm, based on GaAs VCSEL (1x4) array chip, used for high-speed optical modules 100G-SR4 or 200G-SR8 required in AI supercomputing centers
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